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Kontak Person : Wang Hong

Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply

Tempat asal XIAN, SHANNXI CHINA
Nama merek XIWUER
Sertifikasi ISO9001,ISO14001,OHSAS18001
Nomor model CT8-1-40KV-150PF
Kuantitas min Order 1 buah
Harga dapat dinegosiasikan
Kemasan rincian Karton
Waktu pengiriman 10-15 hari
Syarat-syarat pembayaran L/c, t/t
Menyediakan kemampuan 4.000.000 buah setahun

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Detail produk
Menyoroti

Low Dissipation High Voltage Doorknob Capacitor

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High Withstanding Voltage RF Power Supply Capacitor

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High Insulation Resistance HV Doorknob Capacitor

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Deskripsi Produk
High Voltage Doorknob Capacitors for RF Power Supply
Technical Specifications
No. Specification Dissipation Withstanding Voltage Insulation Resistance Dimensions (mm)
1 20kV-2000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:45 | H:19 | L:23 | D:12 | M:5
2 20kV-10000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:65 | H:15 | L:19 | D:12 | M:5
3 20kV-18000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:80 | H:17 | L:25 | D:12 | M:5
4 30kV-1000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:45 | H:24 | L:32 | D:12 | M:4
5 30kV-2700pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:60 | H:20 | L:28 | D:12 | M:4
6 30kV-12000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:45 | H:19 | L:23 | D:12 | M:5
7 40kV-150pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:74 | H:18 | L:26 | D:12 | M:5
8 40kV-500pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:28 | H:33 | L:41 | D:8 | M:4
9 40kV-7500pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:80 | H:24 | L:29 | D:12 | M:6
10 40kV-10000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105 D:80 | H:22 | L:26 | D:16 | M:5
Application in PECVD Equipment
Our high-voltage doorknob capacitors provide stable high voltage for Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment, essential for semiconductor, photovoltaic, and optical coating industries. These capacitors enable low-temperature deposition of high-quality thin films by maintaining stable, uniform plasma through efficient RF power supply performance.
Technical Challenges Addressed
  • Impedance Matching: Efficient power coupling to dynamically changing plasma loads
  • High RF Power Handling: Withstands electrical stresses from high frequency and voltage
  • Thermal Management: Minimizes heat accumulation from dielectric and electrode losses
  • Long-term Stability: Prevents capacitance drift that affects deposition rate and film quality
Solution: High-Q, Low-ESR Doorknob Capacitors
  • Efficient Power Transfer: Low ESR minimizes heat generation with high RF currents
  • Thermal Stability: Temperature-compensated ceramic dielectric maintains stable capacitance
  • High Reliability: Rugged construction ensures long service life in demanding RF conditions
Customer Benefits
  • Improved film quality and consistency through stable impedance matching
  • Increased productivity and yield with reduced process interruptions
  • Lower operating costs from reduced energy consumption and maintenance
Our high-voltage doorknob capacitors serve as the "impedance harmonizer" for PECVD equipment, enabling precise atomic-level deposition for superior thin film production.